kw.\*:("Silicio")
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High efficiency solar cells using amorphous silicon and amorphous silicon-germanium based alloysYANG, J; ROSS, R; MOHR, R et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1519-1522Conference Paper
β-SiC/Si heterojunction bipolar transistors with high current gainSUGII, T; ITO, T; FURUMURA, Y et al.IEEE electron device letters. 1988, Vol 9, Num 2, pp 87-89, issn 0741-3106Article
Heteroepitaxial β-SiC on SiFURUMURA, Y; DOKI, M; MIENO, F et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1255-1260, issn 0013-4651Article
A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxideDIMARIA, D. J; ARIENZO, M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1762-1767, issn 0018-9383, 1Article
Formation of particles in a H2-O2 counterflow diffusion flame doped with SiH4 or SiCl4SHYAN-LUNG CHUNG; MING-SHYONG TSAI; HUOO-DENG LIN et al.Combustion and flame. 1991, Vol 85, Num 1-2, pp 134-142, issn 0010-2180, 9 p.Article
Inelastic electron tunneling spectroscopy of si MIS structures with ultrathin thermal silicon nitride and thermal silicaKOVCHAVTSEV, A. P; KURISHEV, G. L; POSTNIKOV, K. O et al.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp 669-674, issn 0031-8965Article
High-yield laser-synthesis of Si-based nanopowdersYONG LIANG; FEN ZHENG; QUANGANG XIAN et al.Powder technology. 2003, Vol 137, Num 1-2, pp 29-33, issn 0032-5910, 5 p.Article
Oxidation behaviour of ceramic fibres from the Si-C-N-O system and related sub-systemsCHOLLON, G.Journal of the European Ceramic Society. 2000, Vol 20, Num 12, pp 1959-1974, issn 0955-2219Article
Silicon solar cells with antireflection layers of silicon oxide and nitrideABDULLAEV, G. B; BAKIROV, M. YA; SAFAROV, N. A et al.Applied solar energy. 1993, Vol 29, Num 1, pp 76-78, issn 0003-701XArticle
Photoluminescence absorption spectroscopy in a-Si:H and related alloysRADHA RANGANATHAN; GAL, M; TAYLOR, P. C et al.Solar cells. 1988, Vol 24, Num 3-4, pp 257-262, issn 0379-6787Conference Paper
Ball lightning caused by oxidation of nanoparticle networks from normal lightning strikes on soilABRAHAMSON, J; DINNISS, J.Nature (London). 2000, Vol 403, Num 6769, pp 519-521, issn 0028-0836Article
Some new perspectives on oxidation of silicon carbide and silicon nitrideLUTHRA, K. L.Journal of the American Ceramic Society. 1991, Vol 74, Num 5, pp 1095-1103, issn 0002-7820, 9 p.Article
Approximate calculation of inner-shell binding energies and Auger transition energies of solid silicon compoundsZWANZIGER, C; PETROWA, S; REINHOLD, J et al.Physica status solidi. B. Basic research. 1988, Vol 145, Num 2, pp 603-607, issn 0370-1972Article
Entwicklung metallorganisch basierter Keramiken = Development of ceramics via pyrolysis of metal organic polymersGADOW, R; KIENZLE, A.Materialwissenschaft und Werkstofftechnik. 1998, Vol 29, Num 7, pp 371-384, issn 0933-5137Article
Silicon nitride ridge-type optical waveguides fabricated on oxidized silicon by laser direct writingOHTANI, M; HANABUSA, M.Applied optics. 1992, Vol 31, Num 27, pp 5830-5832, issn 0003-6935Article
The influence of different oxides on the formation of Si2N2O from SiO2 and Si3N4BERGMAN, B; HEPING, H.International journal of high technology ceramics. 1990, Vol 6, Num 1, pp 3-8, issn 0267-3762, 6 p.Article
An analysis of thermal stresses in a multilayer thin film printheadJOU, J. H; HSU, L; CHANG, L. S et al.Thin solid films. 1991, Vol 201, Num 2, pp 253-265, issn 0040-6090Article
Challenges for photovoltaic silicon materialsCOLETTI, Gianluca; GORDON, Ivan; SCHUBERT, Martin C et al.Solar energy materials and solar cells. 2014, Vol 130, pp 629-633, issn 0927-0248, 5 p.Conference Paper
Formation and inhibition of polysilicon nucleation on SiO2 for SOI by ELOYAN CHUNLI; LIU MINGDENG; QUAN BAOFU et al.Chinese physics. 1992, Vol 12, Num 2, pp 438-442, issn 0273-429XArticle
From Ψ-MOSFET with silicon on oxide to Ψ-MOSFET with silicon carbide on nitrideRAVARIU, C; RUSU, A; RAVARIU, F et al.Diamond and related materials. 2002, Vol 11, Num 3-6, pp 1268-1271, issn 0925-9635Conference Paper
The surface transient in Si for SIMS with oblique low-energy O2+ beamsJIANG, Z. X; ALKEMADE, P. F. A.Surface and interface analysis. 1999, Vol 27, Num 3, pp 125-131, issn 0142-2421Article
A comparison of argon and hydrogen ion etching and damage in the Si-SiO2 systemHU, Y. Z; LI, M; ANDREWS, J. W et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 7, pp 2022-2026, issn 0013-4651Article
Lift-off patterning of ion-beam sputter deposited silicon nitride oxidation masksBOSSEBOEUF, A; BOUCHIER, D; FOURRIER, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2526-2529, issn 0734-211XArticle
Redistribution of impurities during thermal oxidation of polycrystalline siliconSUZUKI, K; KATAOKA, Y.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp 1794-1798, issn 0013-4651Article
Aerosol jet etchingCHEN, Y. L; BROCK, J. R; TRACHTENBERG, I et al.Aerosol science and technology. 1990, Vol 12, Num 4, pp 842-855, issn 0278-6826, 14 p.Article